FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME

摘要

A problem is arisen in conventional J-FETs that a shifting in a threshold voltage (V_T) is generated before or after an energization with a gate current. A junction gate field effect transistor (J-FET) according to the present invention includes an undoped InGaAs channel layer 5 , which is capable of accumulating carrier of a first conductivity type, a p⁺ type GaAs layer 17 (semiconductor layer), which is provided on the undoped InGaAs channel layer 5 , and contains an impurity of a second conductivity type, and a gate electrode 18 , which is provided on the p⁺ type GaAs layer 17 . Here, the concentration of hydrogen contained in the p⁺ type GaAs layer 17 is lower than the concentration of the second conductivity type carrier in the p⁺ type GaAs layer 17.