| 摘要 |
A method for manufacturing a flash memory device includes: a) forming a stack gate pattern composed of a tunnel oxide layer, a floating gate, ONO layers, and a control gate on a semiconductor substrate; b) conformably forming a first sidewall oxide layer made of a silicon oxide layer along both sidewalls of the stack gate pattern; c) performing a plasma nitride process for forming a nitride barrier layer in the first sidewall oxide layer; d) forming a sidewall nitride layer on the first sidewall oxide layer; e) conformably forming a second sidewall oxide layer on the sidewall nitride layer; and f) performing an etching process for forming a spacer which includes the first sidewall oxide layer, the nitride barrier layer, the sidewall nitride layer, and the second sidewall oxide layer. The flash memory device prevents data from being lost via the spacer equipped with a nitride barrier layer, resulting in increased reliability of a desired flash memory device.
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