发明名称 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition exhibiting good performance in terms of pattern collapse and a pattern profile not only in normal exposure (dry exposure) but also in liquid immersion exposure, and which ensures good pattern resolution and a good pattern profile in double exposure, and a pattern forming method using the positive resist composition. <P>SOLUTION: The positive resist composition comprises: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B) a resin of which solubility in an alkali developer increases under the action of an acid; and (C) a compound capable of decomposing under the action of an acid to generate an acid. The pattern forming method using the positive resist composition is also provided. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008209889(A) 申请公布日期 2008.09.11
申请号 JP20070178474 申请日期 2007.07.06
申请人 FUJIFILM CORP 发明人 WADA KENJI
分类号 G03F7/039;G03F7/004;G03F7/11;G03F7/38;H01L21/027 主分类号 G03F7/039
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