| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition capable of enhancing yield by satisfying high resolution, high sensitivity and reduced development defects after pattern formation, in microfabrication of a semiconductor element using actinic rays or radiation, particularly KrF excimer laser light, electron beams or EUV light, and a pattern forming method using the same. <P>SOLUTION: The resist composition comprises: a resin containing a specific repeating unit; a compound capable of generating an acid upon irradiation with actinic rays or radiation; and (C) a solvent, wherein the resist composition contains, as the solvent (C), (C1) a propylene glycol monoalkyl ether carboxylate and (C2) at least one member selected from the group consisting of a propylene glycol monoalkyl ether, an alkyl lactate, an acetic acid ester, an alkyl alkoxypropionate, a chain ketone and a cyclic ketone. The pattern forming method using the same is also provided. <P>COPYRIGHT: (C)2008,JPO&INPIT |
