| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an exposure device in which a projection optic system can be brought, before exposure is performed, into a thermal state close to a time when exposure is performed, and to provide an exposure method and a device manufacturing method. <P>SOLUTION: The exposure device 10 comprises: a power source device 50 for generating the light source light of a given wave range including extreme ultraviolet rays; an illumination optic system 60 for illuminating a mask MA for transferring using the extreme ultraviolet rays from the light source device 50 as exposure light; a projection optic system 70 for forming a pattern image of the mask MA on a wafer WA; and a reflectivity adjusting member 90 which is disposed so that it can evacuate to a position on an optical path more downstream than a final optical element constituting the projection optic system 70, and which reflects unexposed light that passes through the illumination optic system 60 and the projection optic system 70 and is included in the light source light. In this case, when the wafer WA has properties to reflect the unexposed light, it is possible to bring the projection optics system 70 into a state substantially the same as the thermal state when exposure is performed. This allows the suppression of thermal variation in the projection optic system 70 during exposure, and allows high precision exposure. <P>COPYRIGHT: (C)2008,JPO&INPIT |
