SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a work function of a metal electrode provided on an insulating film made of a material having a higher dielectric ratio than SiO2has a desired value. SOLUTION: The semiconductor device includes: a semiconductor substrate 34; a tunnel insulating layer 36 formed on the semiconductor substrate; a floating gate electrode 37 provided on the tunnel insulating layer; an inter-electrode insulating film 38 including a first insulating layer 38a formed on the floating gate electrode and made of a material having a high-dielectric ratio and a second insulating layer 38b formed on the first insulating layer and containing silicon, oxygen, and nitrogen or containing silicon and nitrogen; a control gate electrode 40 formed on the inter-electrode insulating film; an interface layer 44 formed in an interface between the second insulating layer and the control gate electrode and containing a 13-group element; and a source-drain region 35 formed in the semiconductor substrate on both sides of the control gate electrode. As for the number of bonding states of the 13-group elements in the interface layer, the number of metal bonding states is larger than the total number of oxide, nitride, or oxide and nitride bonding states. COPYRIGHT: (C)2009,JPO&INPIT