| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a nonvolatile semiconductor storage device that has memory cells of good electrical properties and is suitable for high integration. SOLUTION: Firstly, an arrangement status is formed with the pattern of a sacrificial layer IL being located on one sidewall side of a memory gate electrode MG. From the arrangement status, a conductive layer for a control gate CG is formed so that a level difference portion created by the other sidewall of the memory gate electrode MG is covered. Then, anisotropic etching is performed to the conductive layer for the control gate CG. After that, the conductive layer for the control gate CG is left along the other sidewall of the memory gate electrode MG in such a way that a control gate electrode CG is formed from the conductive layer for the control gate CG. COPYRIGHT: (C)2009,JPO&INPIT
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