| 摘要 |
PROBLEM TO BE SOLVED: To achieve a magnetoresistance change rate as high as in a case of a conventional large width W even when a width W of a semiconductor operating layer in a direction orthogonal to a length direction of the magnetoresistance element, that is, a direction between electrodes is reduced. SOLUTION: The semiconductor magentoresistance element includes a thin film semiconductor operating layer formed on a substrate, input-output electrodes arranged at least on two end parts on the semiconductor operating layer, and a plurality of short-circuit electrodes arranged at constant intervals in an extending direction of a semiconductor layer extending in a right angle direction with respect to the extending direction of the semiconductor layer extending between the input-output electrodes on the semiconductor operating layer between the input-output electrodes. When the width of the semiconductor operating layer in the right angle direction with respect to the extending direction of the semiconductor layer extending between the input-output electrodes is not more than 60μm, a length of the short-circuit electrode in the extending direction of the semiconductor layer is not more than 5μm, the width of the semiconductor operating layer is W, and a distance between the plurality of the short-circuit electrodes at the constant interval is L, L/W which is a ratio of L and W is not more than 0.3. It is preferable that the L/W is not less than 0.1, and the length of the short-circuit electrode is not less than 2μm. COPYRIGHT: (C)2009,JPO&INPIT
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