METHOD OF FORMING A THIN FILM AND LUMINESCENCE DEVICE

摘要

A method for forming a thin film and a light emitting device are provided to prevent a deep level discharge by using a GeZnO thin film as a transparent electrode. A ZnO target doped with GeO2 is loaded in a pulse laser deposition chamber. A substrate is loaded. A GeZnO thin film is formed in an upper part of the substrate by irradiating a pulse laser to the target. The GeO2 of 0.1 to 0.5 at.% is contained. The GeO2 powder and the ZnO powder are mixed by using a plastic container. The target is made by performing a uniaxial pressing process and a cold iso-static press process of 24000kg/cm^2. The target is sintered in a furnace of 1000 to 1300 degrees centigrade for three to five hours. The chamber maintains the pressure of 50 to 200m Torr, an oxygen atmosphere, and a substrate temperature of 100 to 600 degrees centigrade.