| 摘要 |
Disclosed is a power amplification system having shared common base biasing. The power amplification system includes a plurality of cascode amplifier sections, in which each section of a plurality of the amplifier sections includes a first transistor and a second transistor. The power amplification system includes a plurality of common emitter biasing components, in which each component of a plurality of the common emitter biasing components is coupled to a base of the first transistor of each of a plurality of the cascode amplifier sections, and controlled to bias the first transistor of each of a plurality of the cascode amplifier sections. The power amplification system includes a common base biasing component coupled to a base of the second transistor of each of a plurality of the cascode amplifier sections and controlled to bias the second transistor of each of a plurality of the cascode amplifier sections. |
