METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER

摘要

The present invention is provided with: a rear surface oxide film forming step for forming an oxide film on the rear surface of a silicon wafer; a rear surface oxide film removing step for removing the oxide film on an outer peripheral portion of the silicon wafer; an argon annealing step for performing heat treatment under argon gas atmosphere; and an epitaxial film forming step for forming an epitaxial film on the front surface of the silicon wafer. The epitaxial film forming step has: a prebake step for etching a surface layer of the silicon wafer by heat treating the silicon wafer under a gas atmosphere containing hydrogen and hydrogen chloride; and an epitaxial film growing step for growing the epitaxial film on the front surface of the silicon wafer.