| 摘要 |
3A MOSFET having a low resistance gate electrode structure includes silicided source and drain regions, and a silicided gate electrode wherein the thickness of the silicide layer superjacent the gate electrode is substantially thicker than the silicide layers overlying the source and drain regions. A process in accordance with the present invention decouples the silicidation of MOSFET source/drain regions from the silicidation of the gate electrode.
|
