Method of manufacturing a semiconductor device having MOS transistor and bipolar transistor in mixture on the same substrate

摘要

There are formed simultaneously a first conductive layer selectively on a region of a semiconductor substrate in which an N-channel MOS transistor is to be formed and on a region of the semiconductor in which a p-channel MOS transistor is to be formed, a second conductive layer on a region of the semiconductor substrate in which a capacitive element is to be formed, and a third conductive layer on a region of the semiconductor substrate in which the resistive element is to be formed. Next, there are formed simultaneously a first insulating film on the lateral side of the first conductive layer, a second insulating film selectively on the second conductive layer, and a third insulating film selectively on the third conductive layer. Then the fourth insulating film is formed on the whole surface. Thereafter there are formed simultaneously a fifth conductive layer on a region of the semiconductor substrate in which a bipolar transistor is to be formed, and a sixth conductive layer on the fourth insulating film on the second conductive layer.