| 发明名称 |
Deposition of nano-crystal silicon using a single wafer chamber |
| 摘要 |
Numerous embodiments of a method for depositing a layer of nano-crystal silicon on a substrate. In one embodiment of the present invention, a substrate is placed in a single wafer chamber and heated to a temperature between about 300° C. to about 490° C. A silicon source is also fed into the single wafer chamber.
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| 申请公布号 |
US2007287271(A1) |
申请公布日期 |
2007.12.13 |
| 申请号 |
US20070893301 |
申请日期 |
2007.08.13 |
| 申请人 |
PANAYIL SHEEBA J;LI MING;WANG SHULIN;PICKERING JONATHAN C |
发明人 |
PANAYIL SHEEBA J.;LI MING;WANG SHULIN;PICKERING JONATHAN C. |
| 分类号 |
H01L21/20;B05C5/00 |
主分类号 |
H01L21/20 |
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