| 摘要 |
A method for manufacturing a fin-type field effect transistor simply and securely by using a SOI (Silicon On Insulator) wafer, capable of suppressing an undercut formation, is disclosed. The method includes forming a fin-shaped protrusion by selectively dry-etching a single crystalline silicon layer until an underlying buried oxide layer is exposed; forming a sacrificial oxide film by oxidizing a surface of the protrusion including a damage inflicted thereon; and forming a fin having a clean surface by removing the sacrificial oxide film by etching, wherein an etching rate r<SUB>1 </SUB>of the sacrificial oxide film is higher than an etching rate r<SUB>2 </SUB>of the buried oxide layer during the etching.
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