Fin-type bipolar transistor for bipolar complementary metal oxide semiconductor (BiCMOS) circuit arrangement, has terminal region formed on portion of main region such that terminal region is formed as epitaxially grown region

摘要

The fin-type bipolar transistor has a fin structure that is formed in the main region of transistor. A terminal region is formed on a portion of main region such that the terminal region is formed as an epitaxially grown region. Independent claims are included for the following: (1) method for producing bipolar transistor; (2) vertically integrated electronic device; (3) method for producing vertically integrated electronic device; (4) bipolar complementary metal oxide semiconductor (BiCMOS) circuit arrangement; and (5) method for fabricating BiCMOS circuit arrangement.