SILICON NANO-TIP THIN FILM FOR FLASH MEMORY CELLS

摘要

A quantum nano-tip (QNT) thin film, such as a silicon nano-tip (SiNT) thin film, for flash memory cells is provided to increase erase speed. The QNT thin film includes a first dielectric layer and a second dielectric layer arranged over the first dielectric layer. Further, the QNT thin film includes QNTs arranged over the first dielectric layer and extending into the second dielectric layer. A ratio of height to width of the QNTs is greater than 50 percent. A QNT based flash memory cell and a method for manufacture a SiNT based flash memory cell are also provided.

主权项

1. A flash memory cell comprising:
a semiconductor substrate; and a quantum nano-tip thin film configured to trap charges corresponding to a unit of data, wherein the quantum nano-tip thin film includes:
a first dielectric layer arranged over the semiconductor substrate;a second dielectric layer arranged over the first dielectric layer; andquantum nano-tips arranged over the first dielectric layer and extending into the second dielectric layer, wherein the quantum nano-tips culminate at points within the second dielectric layer and have a cone shape.