发明名称 |
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE |
摘要 |
An asymmetric high-k dielectric for reduced gate induced drain leakage in high-k MOSFETs and methods of manufacture are disclosed. The method includes performing an implant process on a high-k dielectric sidewall of a gate structure. The method further includes performing an oxygen annealing process to grow an oxide region on a drain side of the gate structure, while inhibiting oxide growth on a source side of the gate structure adjacent to a source region. |
申请公布号 |
US2016204209(A1) |
申请公布日期 |
2016.07.14 |
申请号 |
US201615076021 |
申请日期 |
2016.03.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHOU Anthony I.;KUMAR Arvind;LIN Chung-Hsun;NARASIMHA Shreesh;ORTOLLAND Claude;SHAW Jonathan T. |
分类号 |
H01L29/40;H01L21/324;H01L29/66;H01L21/3115 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
|
主权项 |
1. A method comprising:
performing an implant process on a high-k dielectric sidewall of a gate structure; performing an oxygen annealing process to grow an oxide region on a drain side of the gate structure, while inhibiting oxide growth on a source side of the gate structure adjacent to a source region; and performing a damaging process on a sacrificial sidewall on a source side of the gate structure. |
地址 |
Armonk NY US |