| 摘要 |
FIELD: electricity.SUBSTANCE: invention relates to the sphere of electrical engineering. In order to provide a subunit (7) for the formation of an inverter (1) for a high-voltage area with the first subunit (5), which comprises the first energy accumulator (18), the first in-series connection (11) of two heavy-duty semiconductor switching modules (12, 13), which are coupled in parallel to the first energy accumulator and contain respectively switched on and switched off heavy-duty semiconductors (14, 15) with the same transmittance direction and transmitting in the reverse transmittance direction, and the first junction terminal (x2), which is connected to a potential point between the heavy-duty semiconductor switching modules (12, 13) of the first in-series connection and the second subunit, which comprises the second energy accumulator (26), the second in-series connection (19) of two heavy-duty semiconductor switching modules (20, 21), which are coupled in parallel to the second energy accumulator (26) and contain respectively switched on and switched off heavy-duty semiconductors (22, 23) with the same transmittance direction and transmitting in the above reverse transmittance direction, and the second junction terminal (x1), which is connected to a potential point between the heavy-duty semiconductor switching modules (20, 21) of the second in-series connection (19), which limits fault currents occurring at fault in a fast, reliable and efficient way, it is suggested that the first subunit and second subunit (10) are interconnected by connection facilities (27), which are made so that in a selected switching condition for all the heavy-duty semiconductor switching modules (12, 13, 20, 21) the passage of current between the first junction terminal (x2) and the second junction terminal (x1) in both directions is carried out only through the first energy accumulator (18) and/or the second energy accumulator (26).EFFECT: improved efficiency of short-circuit protection.13 cl, 2 dwg, 1 tbl |
