Silicon carbide semiconductor device e.g. metal oxide semiconductor field effect transistor, manufacturing method, involves treating surface of silicon carbide semiconductor substrate with hydrogen in reaction furnace with reduced pressure

摘要

The method involves treating a trench surface of an n +> silicon carbide semiconductor substrate (1) with hydrogen in a reaction furnace with a reduced pressure at 1500 degree Celsius or more. The trench surface of the silicon carbide semiconductor substrate is etched around several nanometers to 0.1 micrometer by supplying the hydrogen as carrier gas and by adding hydrogen chloride gas into the hydrogen carrier gas. A gate insulating film (15) is formed on the silicon carbide semiconductor substrate.