发明名称 PLANAR FIELD EMITTERS AND HIGH EFFICIENCY PHOTOCATHODES BASED ON ULTRANANOCRYSTALLINE DIAMOND
摘要 A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 1012 to about 1014 emitting sites per cm2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.
申请公布号 US2016203937(A1) 申请公布日期 2016.07.14
申请号 US201514594949 申请日期 2015.01.12
申请人 UChicago Argonne, LLC 发明人 Sumant Anirudha V.;Baryshev Sergey V.;Antipov Sergey P.
分类号 H01J1/304;H01J9/12;H01J1/34;H01J9/02 主分类号 H01J1/304
代理机构 代理人
主权项 1. A method of forming a field emitter, comprising: disposing a first layer on a substrate; seeding the first layer with nanodiamond particles; maintaining the substrate with the seeded first layer disposed thereon at a first temperature and a first pressure in a mixture of gases, the mixture including nitrogen; and exposing the first layer to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, the nitrogen doped ultrananocrystalline diamond film having a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %, wherein, the field emitter has about 1012 to about 1014 emitting sites per cm2.
地址 Chicago IL US