发明名称 |
PLANAR FIELD EMITTERS AND HIGH EFFICIENCY PHOTOCATHODES BASED ON ULTRANANOCRYSTALLINE DIAMOND |
摘要 |
A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 1012 to about 1014 emitting sites per cm2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light. |
申请公布号 |
US2016203937(A1) |
申请公布日期 |
2016.07.14 |
申请号 |
US201514594949 |
申请日期 |
2015.01.12 |
申请人 |
UChicago Argonne, LLC |
发明人 |
Sumant Anirudha V.;Baryshev Sergey V.;Antipov Sergey P. |
分类号 |
H01J1/304;H01J9/12;H01J1/34;H01J9/02 |
主分类号 |
H01J1/304 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a field emitter, comprising:
disposing a first layer on a substrate; seeding the first layer with nanodiamond particles; maintaining the substrate with the seeded first layer disposed thereon at a first temperature and a first pressure in a mixture of gases, the mixture including nitrogen; and exposing the first layer to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, the nitrogen doped ultrananocrystalline diamond film having a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %, wherein, the field emitter has about 1012 to about 1014 emitting sites per cm2. |
地址 |
Chicago IL US |