发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A semiconductor memory device includes a memory cell, a sense amplifier electrically connected to the memory cell, the sense amplifier including a node for sensing a voltage during a sense operation and a data latch electrically connected to the node and configured to hold a first voltage corresponding to a voltage of the node when a strobe signal is issued during a strobe operation, and a controller configured to raise the voltage of the node during the strobe operation before the strobe signal is issued. |
申请公布号 |
US2016203874(A1) |
申请公布日期 |
2016.07.14 |
申请号 |
US201615073555 |
申请日期 |
2016.03.17 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MAEJIMA Hiroshi |
分类号 |
G11C16/26 |
主分类号 |
G11C16/26 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor memory device, comprising:
a memory cell; a sense amplifier electrically connected to the memory cell and including a node for sensing a voltage during a sense operation; and a controller configured to perform the sense operation and a strobe operation during a read operation, and including a sense node driver that is configured to raise the voltage of the node, by outputting a first voltage during the sense operation and outputting a second voltage during the strobe operation, the first voltage being higher than the second voltage. |
地址 |
Tokyo JP |