发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device includes a memory cell, a sense amplifier electrically connected to the memory cell, the sense amplifier including a node for sensing a voltage during a sense operation and a data latch electrically connected to the node and configured to hold a first voltage corresponding to a voltage of the node when a strobe signal is issued during a strobe operation, and a controller configured to raise the voltage of the node during the strobe operation before the strobe signal is issued.
申请公布号 US2016203874(A1) 申请公布日期 2016.07.14
申请号 US201615073555 申请日期 2016.03.17
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MAEJIMA Hiroshi
分类号 G11C16/26 主分类号 G11C16/26
代理机构 代理人
主权项 1. A semiconductor memory device, comprising: a memory cell; a sense amplifier electrically connected to the memory cell and including a node for sensing a voltage during a sense operation; and a controller configured to perform the sense operation and a strobe operation during a read operation, and including a sense node driver that is configured to raise the voltage of the node, by outputting a first voltage during the sense operation and outputting a second voltage during the strobe operation, the first voltage being higher than the second voltage.
地址 Tokyo JP