发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus which can improve uniformity of a gas flow rate at a stage edge of a stage such as a deposition device and an etcher.SOLUTION: A semiconductor manufacturing apparatus comprises: a stage 16; an annular channel 30b which surrounds a processing space 17 on the stage 16; an annular slit 30a for introducing to the annular channel 30b, the gas supplied to the processing space 17; an exhaust duct 30 where an exhaust port 30c for discharging the gas of the annular channel 30b to the outside is formed. An opening ratio of the slit 30a is increased with the increasing distance from the exhaust port 30c.SELECTED DRAWING: Figure 1
申请公布号 JP2016149526(A) 申请公布日期 2016.08.18
申请号 JP20150224473 申请日期 2015.11.17
申请人 ASM IP HOLDING B V 发明人 TSUJI NAOTO
分类号 H01L21/31;C23C16/455;H01L21/205;H01L21/3065 主分类号 H01L21/31
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