| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a tunnel magnetoresistive element and a manufacturing device of a tunnel magnetoresistive element capable of improving a tunnel magnetoresistance effect in a tunnel magnetoresistive element having a tunnel barrier layer.SOLUTION: A manufacturing method for a tunnel magnetoresistive element comprises the steps of: forming a first magnetic layer 13 on a substrate 11; forming a first tunnel barrier layer 141 which is an oxide of a metal element on the first magnetic layer 13; forming a diffusion suppression metal layer composed of a metal element on the first tunnel barrier layer 141; forming a second magnetic layer 15 on the diffusion suppression metal layer; and heating a laminate in which the first tunnel barrier layer 14 and the diffusion suppression metal layer are sandwiched between the first magnetic layer 13 and the second magnetic layer 15. In the step of heating the laminate, a second tunnel barrier layer 142 which is an oxide of a metal element is formed from the diffusion suppression metal layer by the oxygen diffused from the first tunnel barrier layer 141. |
