发明名称 半導体装置
摘要 A semiconductor device with a transistor region has a first conductor pattern formed within a multilayer interconnect structure positioned under a signal line and above the transistor region. The first conductor pattern is coupled to ground or a power supply and overlaps the transistor region. The signal line overlaps the first conductor pattern.
申请公布号 JP6000317(B2) 申请公布日期 2016.09.28
申请号 JP20140224036 申请日期 2014.11.04
申请人 ルネサスエレクトロニクス株式会社 发明人 冨留宮 正之;田辺 昭;中柴 康隆
分类号 H01L21/822;H01L21/3205;H01L21/768;H01L23/522;H01L27/04 主分类号 H01L21/822
代理机构 代理人
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