| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvoltage optical bistable device which contains a pin-diode laminar structure having a miultiple quantum well structure as an intermediate layer and has a nonresonant structure. SOLUTION: This pin diode laminar structure consists of a semi-insulating semiconductor substrate 1, semiconductor mirror layer 2, p-type semiconductor electrode layer 3, first intermediate active layer 4, n-type semiconductor electrode layer 5, second intermediate active layer 6, p-type semiconductor electrode layer 7 and non-reflecting film 8 successively deposited. The p-type semiconductor electrode layer 3, intermediate active layer 4, n-type semiconductor electrode layer 5, intermediate active layer 6 and p-type semiconductor electrode layer 7 form two pin diodes connected to each other to give a symmetry structure of P-i-N-i-P as a pair, while the semiconductor mirror layer 2 and nonreflecting film 8 form a nonresonant structure. |
