| 摘要 |
A gallium nitride thin film on sapphire substrate having reduced bending deformation and a method for manufacturing the same. An etching trench structure is formed on a sapphire substrate by primary nitradation and HCl treatment and a gallium nitride film is grown thereon by secondary nitradation. The gallium nitride thin film on sapphire substrate comprises an etching trench structure formed on a sapphire substrate, wherein a function graph of a curvature radius Y according to a thickness X of a gallium nitride film satisfies Equation 1 below, and corresponds to or is located above a function graph drawn when Y<SUB>0 </SUB>is 6.23±1.15, A is 70.04±1.92, and T is 1.59±0.12: <?in-line-formulae description="In-line Formulae" end="lead"?>Y=Y<SUB>0</SUB>+A.e<SUP>-(X-1)/T</SUP> [Equation 1] <?in-line-formulae description="In-line Formulae" end="tail"?> where Y is the curvature radius m, X is the thickness of the gallium nitride film, and Y<SUB>0</SUB>, A, and T are positive numbers.
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