发明名称 |
Nitride semiconductor light emitting device and method of manufacturing the same |
摘要 |
A nitride semiconductor light emitting device is provided. The nitride semiconductor light emitting device includes a first nitride layer comprising at least N-type nitride layer. An insulating member is formed on the first nitride layer having a predetermined pattern. An active layer is formed in both sides of the insulating member on the first nitride layer to emit light. A second nitride layer is formed in both sides of the insulating member on the active layer and the second nitride layer comprises at least a P-type nitride layer.
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申请公布号 |
US2007085091(A1) |
申请公布日期 |
2007.04.19 |
申请号 |
US20060580888 |
申请日期 |
2006.10.16 |
申请人 |
LG INNOTEK CO., LTD |
发明人 |
LEE SANG Y. |
分类号 |
H01L33/08;H01L33/20;H01L33/44 |
主分类号 |
H01L33/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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