METHOD OF FORMING A MICRO PATTERN IN A SEMICONDUCTOR DEVICE

摘要

A method for forming a fine pattern of a semiconductor device is provided to form a fine pattern with a desired CD(critical dimension) by forming a fine pattern only by processes for forming first and second sub patterns. An etch target layer, a hard mask layer and a first sub pattern are formed on a semiconductor substrate(100). An insulation layer and a second sub layer are formed on the hard mask layer and the first sub pattern. A first etch process is performed in a manner that the second sub pattern is left on the insulation layer between the first sub patterns to become a second sub pattern. The insulation layer on the first sub pattern and between the first and second sub patterns is eliminated. The hard mask layer is etched to form a hard mask pattern by a second etch process using the first and second sub patterns as an etch mask. The etch target layer is etched by a third etch process using the hard mask pattern as an etch mask. The hard mask layer can be made of a stack structure of an amorphous carbon layer and a silicon oxynitride layer.