| 摘要 |
A semiconductor device is disclosed. Embodiments relate to a semiconductor device which includes an active region including a source region, a drain region, and a channel region. A gate electrode, source electrodes, and a drain electrode are formed around the active region. A plurality of gate fingers diverge from the gate electrode into the channel region. A plurality of source fingers diverge from the source electrodes into the source region, the source fingers being disposed between the gate fingers in a predetermined pattern, the source fingers having at least two finger lines connected to each other via at least one grid line. A plurality of drain fingers diverge from the drain electrode into the drain region, the drain fingers being disposed between the gate fingers where the source fingers are not disposed.
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