| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance line-forming optical system and a method for defect annealing and dopant activation.SOLUTION: A system 10 includes a CO-based line-forming system configured to form, at a wafer surface, a first line image having an optical power of from 2,000 W to 3,000 W. The first line image is scanned over the wafer surface to locally raise the temperature up to a defect anneal temperature. The system includes a visible-wavelength diode-based line-forming system. The visible-wavelength diode-based line-forming system forms a second line image that can be scanned with the first line image to locally raise the wafer surface temperature from the defect anneal temperature to a spike anneal temperature. Use of the visible wavelength for the spike annealing reduces adverse pattern effects and improves temperature uniformity and thus annealing uniformity.SELECTED DRAWING: Figure 1 |
