METHOD AND APPARATUS FOR PLASMA DICING SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To resolve a problem in which current automated plasma etching equipment is not suitable for processing substrates fixed for dicing and it is difficult to realize the benefits that plasma etching techniques should have for die separation.SOLUTION: The present invention provides a method for plasma dicing a substrate. The method includes the following steps of: providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate on a support film provided on a frame to form a work piece; loading the work piece onto the work piece support; providing a cover ring placed above the work piece; generating a plasma by the plasma source; and etching the work piece by the generated plasma.