| 发明名称 |
SEMICONDUCTOR DEVICE WITH MULTILAYER CONTACT AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
The present invention provides a semiconductor with a multilayered contact structure. The multilayered structure includes a metal contact placed on an active region of a semiconductor and a metal contact extension placed on the metal contact. |
| 申请公布号 |
US2016218193(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201615089857 |
申请日期 |
2016.04.04 |
| 申请人 |
NXP B.V. |
发明人 |
HABENICHT Soenke;OELGESCHLAGER Detlef;SCHUMACHER Olrik;BERGLUND Stefan Bengt |
| 分类号 |
H01L29/66;H01L29/10;H01L29/417;H01L29/08 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
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| 主权项 |
|
| 地址 |
Eindhoven NL |
