发明名称 Active Matrix Light Emitting Diode Array and Projector Display Comprising It
摘要 A method of fabricating a pixelated imager and structure including a substrate with a bottom contact layer and active element blanket layers deposited on the bottom contact layer. The blanket layers are separated into an array of active elements with trenches isolating adjacent active elements in the array. A dielectric passivation/planarization layer is positioned over the array of active elements. An array of active element readout circuits overlies the passivation/planarization layer above the trenches with one active element readout circuit coupled to each active element of the array of active elements. Each active element and coupled active element readout circuit defines a pixel and the array of active elements and the coupled array of active element readout circuits defines a pixelated imager, and the readout circuit coupled to each active element includes at least one TFT with an active channel comprising a metal-oxide semiconductor material.
申请公布号 US2016218128(A1) 申请公布日期 2016.07.28
申请号 US201615087716 申请日期 2016.03.31
申请人 Shieh Chan- Long;Yu Gang 发明人 Shieh Chan- Long;Yu Gang
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. A method of fabricating a pixelated imager comprising the steps of: providing a substrate with a bottom contact layer and active element blanket layers deposited or grown on the bottom contact layer; separating the active element blanket layers into an array of active elements with trenches isolating adjacent active elements in the array; forming a dielectric passivation/planarization layer over the active element array; and forming an array of active element readout circuits overlying the passivation/planarization layer above the trenches, one active element readout circuit of the array of active element readout circuits coupled to each active element of the array of active elements, wherein the readout circuit coupled to each active element includes at least one thin film transistor with an active channel comprising a metal-oxide semiconductor material.
地址 Paradise Valley AZ US