| 发明名称 |
METAL-INSULATOR PHASE TRANSITION FLIP-FLOP |
| 摘要 |
A metal-insulator phase transition (MIT) flip-flop employs a selected one of a pair of bi-stable operating states to represent a logic state of the MIT flip-flop. The MIT flip-flop includes an MIT device having a current-controlled negative differential resistance (CC-NDR) to provide the pair of bi-stable operating states. A bi-stable operating state of the pair is capable of being selected by a programing voltage. Once the bi-stable operating state is selected, the bi-stable operating state is capable of being maintained by a bias voltage applied to the MIT device. |
| 申请公布号 |
US2016217850(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201615085543 |
申请日期 |
2016.03.30 |
| 申请人 |
Hewlett Packard Enterprise Development LP |
发明人 |
Ribeiro Gilberto Medeiros;Pickett Matthew D. |
| 分类号 |
G11C11/419;H01L49/00 |
主分类号 |
G11C11/419 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A metal-insulator phase transition (MIT) flip-flop comprising:
a metal-insulator phase transition (MIT) device having current-controlled negative differential resistance (CC-NDR) to provide a pair of bi-stable operating states, the bi-stable operating states being separated from one another on a current-voltage (I-V) characteristic of the MIT device by a CC-NDR region of the I-V characteristic, wherein a bi-stable operating state of the pair is capable of being selected by a programing voltage, and wherein once the bi-stable operating state is selected, the bi-stable operating state is capable of being maintained by a bias voltage applied to the MIT device, the selected bi-stable operating state representing a logic state of the MIT flip-flop. |
| 地址 |
Houston TX US |
