UNDERLAYERS FOR TEXTURED FILMS OF HEUSLER COMPOUNDS

摘要

A structure includes a tetragonal Heusler of the form Mn1+cX, in which X includes an element selected from the group consisting of Ge and Ga, with 0≦c≦3. The tetragonal Heusler is grown directly on (or more generally, over) a substrate oriented in the direction (001) and of the form YMn1+d, wherein Y includes an element selected from the group consisting of Ir and Pt, with 0≦d≦4. The tetragonal Heusler and the substrate are in proximity with each other, thereby allowing spin-polarized current to pass from one through the other. This structure may form part of a magnetic tunnel junction magnetoresistive device, and an array of such magnetoresistive devices may together form an MRAM.

主权项

1. A device, comprising:
a tetragonal Heusler of the form Mn1+c X, wherein X includes an element selected from the group consisting of Ge and Ga, and wherein 0≦c≦3; and a substrate oriented in the direction (001) and of the form YMn1+d, wherein Y includes an element selected from the group consisting of Ir and Pt, and 0≦d≦4, wherein the tetragonal Heusler and the substrate are in proximity with each other, thereby allowing spin-polarized current to pass from one through the other.