| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to control a TiN thin-film thermoelectric semiconductor in crystal orientation and performance factor in a sputtering process thereof.SOLUTION: A method for manufacturing a titanium nitride thin-film thermoelectric semiconductor comprises the step of setting, in a process gas used in TiN thin film sputtering and including Nand Ar, an Ar partial pressure ratio, whereby the crystal orientation, performance factor and thermoelectric conversion performance index of a thin film thus manufactured are controlled. In the method, the crystal orientation is largely changed with an Ar partial pressure ratio near 30% and 70%. By setting the Ar partial pressure ratio to 10-40%, preferably 20-40% and 70-100%, and more preferably 80-100%, a satisfying TiN thin-film thermoelectric conversion semiconductor can be formed.SELECTED DRAWING: Figure 5 |
