| 摘要 |
PROBLEM TO BE SOLVED: To relax electric field concentration below an outer peripheral end of an electrode metal film to improve voltage withstanding in a semiconductor device having a trench structure on a peripheral part around a central part.SOLUTION: A semiconductor device 100 comprises: a circumferential trench 3; internal trenches 4A, 4B formed in a region surrounded by the circumferential trench; an insulation film 5 which covers a part of a surface of a semiconductor layer, which includes a whole inner surface of the circumferential trench and the internal trenches; polysilicon 6 which fills the inside of each internal trench; and an electrode metal film 7 which covers the insulation film, the polysilicon and surfaces 2B, 2C of the semiconductor layer, which are exposed from the insulation film, and which extends to a bottom face of the circumferential trench in which an outer peripheral end 7E is arranged on the bottom face to form Schottky barrier with the surfaces of the semiconductor layer. The insulation film covers the circumferential trench and the surface 2A of the semiconductor layer, which extends to a region between the circumferential trench and the internal trench adjacent to the circumferential trench to insulate the surface from the electrode metal film.SELECTED DRAWING: Figure 1 |
