MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To stably form a gate electrode with a high positional accuracy to an ohmic electrode, using an electron-beam exposure in the formation of a subquatermicron gate FET. SOLUTION: The manufacturing method of a subquatermicron gate FET comprises a process for simultaneously forming a source electrode 7a, a drain electrode 7b and an exposure criterion metal film on a semiconductor substrate 1 and a process for forming a gate electrode 10 on the substrate 1 with the exposure criterion metal film as the criterion.