| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of satisfactorily embedding a wiring material without forming an annular residue of a stopper film for a wiring groove in the case of forming the groove in a dual Damascene process. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of conducting dry etching at an upper interlayer insulating film 7 for the stopper film 6 with a resist pattern 11, as a mask under the conditions of higher selective etching selection ratio of 10 or more than prior art, and etching the film 7 to the film 6, thereby forming the wiring groove 12.
|
