| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of conducting a sidewall oxidation of a polysilicon layer of a gate without using a selective oxidation and forming a shallow junction of an extension region. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of forming an upper gate 16 by partly etching a silicon nitride film layer 15 and a metal layer 14, forming an upper sidewall 17 of a silicon nitride film on a sidewall of the gate 16, etching the layer 13 and the film 12 with the sidewall 17 as a mask, and conducting a sidewall oxidation of the remaining layer 13. The method also comprises the steps of forming the extension region 21 after annealing for the sidewall oxidation of the layer 13 and high temperature RTA treating for activating a source/drain region 20.
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