发明名称 DESTATICIZING METHOD FOR PROCESSED SUBSTRATE, SUBSTRATE PROCESSOR, AND PROGRAM
摘要 PROBLEM TO BE SOLVED: To sufficiently destaticize a processed substrate not only when processing to the processed substrate is normally ended but also even when the processing to the processed substrate is abnormally ended. SOLUTION: The substrate processor executes destaticizing processing to the processed substrate, for example, a wafer W, to which prescribed processing is applied in a state of being attracted and held by a mounting stand, for example, by an electrostatic chuck 122 of a lower electrode 120, when it is detached from the electrostatic chuck 122. It is judged whether or not the prescribed processing to the wafer W before destaticizing the wafer W is normally ended. When judged that it is normally ended, destaticizing conditions are set on the basis of destaticizing condition information during the normal time from a means for storing the destaticizing condition information during the normal time. When judged that it is abnormally ended, the destaticizing conditions are set on the basis of destaticizing condition information during the abnormal time from a means for storing the destaticizing condition information during the abnormal time. The destaticizing processing for the wafer W is executed on the basis of the set destaticizing conditions. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006269854(A) 申请公布日期 2006.10.05
申请号 JP20050087580 申请日期 2005.03.25
申请人 TOKYO ELECTRON LTD 发明人 YOKOUCHI TAKESHI;YAGI FUMIKO
分类号 H01L21/683;H01L21/02;H01L21/3065 主分类号 H01L21/683
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