发明名称 |
A METHOD OF FABRICATING A COMPOSITE SUBSTRATE WITH IMPROVED ELECTRICAL PROPERTIES |
摘要 |
<p>The method involves forming or depositing insulation layers (31, 32) respectively on a support substrate (1) and a source substrate, and recovery heat treating of the layers. A front face of the layer (32) is adhered with a front face of the substrate (1) or a front face of the layer (31) after plasma activation. The substrates are adhered by molecular adhesion so that the layer (32) is situated between the substrates. A rear part of the source substrate is removed while retaining a thickness of material constituting an active layer (21) to obtain a composite substrate (4).</p> |
申请公布号 |
SG134270(A1) |
申请公布日期 |
2007.08.29 |
申请号 |
SG20070003312 |
申请日期 |
2007.01.17 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A. |
发明人 |
ALLIBERT FREDERIC;KERDILES SEBASTIEN |
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