发明名称 A METHOD OF FABRICATING A COMPOSITE SUBSTRATE WITH IMPROVED ELECTRICAL PROPERTIES
摘要 <p>The method involves forming or depositing insulation layers (31, 32) respectively on a support substrate (1) and a source substrate, and recovery heat treating of the layers. A front face of the layer (32) is adhered with a front face of the substrate (1) or a front face of the layer (31) after plasma activation. The substrates are adhered by molecular adhesion so that the layer (32) is situated between the substrates. A rear part of the source substrate is removed while retaining a thickness of material constituting an active layer (21) to obtain a composite substrate (4).</p>
申请公布号 SG134270(A1) 申请公布日期 2007.08.29
申请号 SG20070003312 申请日期 2007.01.17
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A. 发明人 ALLIBERT FREDERIC;KERDILES SEBASTIEN
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