发明名称 |
Method of forming a dielectric film |
摘要 |
A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas. |
申请公布号 |
EP1912253(A2) |
申请公布日期 |
2008.04.16 |
申请号 |
EP20080001543 |
申请日期 |
2001.03.13 |
申请人 |
OHMI, TADAHIRO |
发明人 |
OHMI, TADAHIRO;SUGAWA, SHIGETOSHI |
分类号 |
H01L21/316;C23C8/02;C23C8/36;H01L21/31;H01L21/3105;H01L21/314;H01L21/318;H01L21/336;H01L21/8238;H01L21/8247;H01L27/105;H01L27/115;H01L29/423;H01L29/792 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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