发明名称 |
Method and Structure for Improved Lithographic Alignment to Magnetic Tunnel Junctions in the Integration of Magnetic Random Access Memories |
摘要 |
A magnetic memory device including a Magnetic Tunnel Junction (MTJ) device comprises a substrate and Front End of Line (FEOL) circuitry. A Via level (VA) InterLayer Dielectric (ILD) layer, a bottom conductor layer, and an MTJ device formed over the top surface of the VA ILD layer are formed over a portion of the substrate. An alignment region including alignment marks extends through the bottom conductor layer and extends down into the device below the top surface of the VA ILD layers is juxtaposed with the MJT device.
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申请公布号 |
US2009059656(A1) |
申请公布日期 |
2009.03.05 |
申请号 |
US20070850427 |
申请日期 |
2007.09.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KANAKASABAPATHY SIVANANDA K.;ASSEFA SOLOMON |
分类号 |
G11C11/02;B44C1/22 |
主分类号 |
G11C11/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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