| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing high-purity zirconium or halfnium powder at a low cost and with safety, capable of reducing impurities thereof, which are obstacles to assurance of operational functions of a semi-conductor. SOLUTION: The method for manufacturing the high-purity zirconium or halfnium powder includes the steps of: applying electron beam to zirconium or halfnium raw material for melting it to a high-purity level and casting the resultant molten metal into an ingot; heating an ingot or chips of the resultant high-purity zirconium or hafnium to≥500°C in a hydrogen atmosphere to be hydrogenated; cooling the ingot and peeling the zirconium or halfnium hydride powder from the ingot to obtain high-purity zirconium hydride or halfnium hydride powder; and removing hydrogen from the high-purity zirconium hydride or halfnium hydride powder. COPYRIGHT: (C)2009,JPO&INPIT
|
