| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a metal oxide semiconductor device having a high carrier mobility.SOLUTION: The present manufacturing method is used in manufacturing a semiconductor device having a metal oxide active layer that has a thickness of less than 100 nm, and the upper major surface and the lower major surface of the metal oxide active layer have a joining material to form underlying interfaces and overlying interfaces. The manufacturing method includes controlling interfacial interactions in the underlying interfaces and the overlying interfaces by selecting a metal oxide for the metal oxide active layer and by selecting a specific material for the joining material. The method also includes one or both of the following steps: of controlling interactions in the underlying interfaces by surface treatment of an underlying material forming a component of the underlying interfaces; and of controlling interactions in the overlying interfaces by surface treatment of a metal oxide film performed prior to deposition of a material on the metal oxide layer.SELECTED DRAWING: Figure 1 |
