发明名称 SEMICONDUCTOR POWER MODULE AND POWER CONVERSION DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a module structure which can achieve downsizing of the module while inhibiting a noise influence exerted from a main terminal to a control terminal in a semiconductor power module.SOLUTION: A semiconductor power module 10 comprises main terminals (positive electrode terminal 11a, negative electrode terminal 11b and AC terminal 11c) at least one of which includes two portions extending in a common direction. For example, a structure where one and the other of the two portions extend in a common direction and the two portions are formed by a single component having a two-pronged shape branching from the outside toward the inside of the semiconductor power module 10 or by separate two components. The semiconductor power module 10 includes control terminals (gate signal terminal 3a(3c) and emitter signal terminal 3b(3d)) which are arranged in such a manner that a laminated part of the control terminals is sandwiched by the one and the other of the two portions.SELECTED DRAWING: Figure 2
申请公布号 JP2016119430(A) 申请公布日期 2016.06.30
申请号 JP20140259670 申请日期 2014.12.24
申请人 HITACHI LTD;HITACHI POWER SEMICONDUCTOR DEVICE LTD 发明人 HORIUCHI KEISUKE;KAWASE DAISUKE;INABA MASAMITSU;SAITO KATSUAKI
分类号 H01L25/07;H01L25/18;H02M7/48 主分类号 H01L25/07
代理机构 代理人
主权项
地址