发明名称 |
MASK BLANK, TRANSFER MASK AND METHODS OF MANUFACTURING THE SAME |
摘要 |
In a mask blank having a structure in which a light-semitransmissive film and a light-shielding film are laminated on a main surface of a transparent substrate, the light-semitransmissive film is made of a material that can be dry-etched with an etching gas containing a fluorine-based gas, the light-shielding film is made of a material that contains tantalum and one or more elements selected from hafnium and zirconium and contains no oxygen except in a surface layer thereof, an etching stopper film is provided between the light-semitransmissive film and the light-shielding film, and the etching stopper film is made of a material that contains chromium with an oxygen content of 20 at % or less. |
申请公布号 |
US2016202602(A1) |
申请公布日期 |
2016.07.14 |
申请号 |
US201414892260 |
申请日期 |
2014.05.19 |
申请人 |
HOYA CORPORATION |
发明人 |
SHISHIDO Hiroaki;NOZAWA Osamu;OHKUBO Ryo |
分类号 |
G03F1/32 |
主分类号 |
G03F1/32 |
代理机构 |
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代理人 |
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主权项 |
1. A mask blank comprising a light-semitransmissive film and a light-shielding film on a main surface of a transparent substrate, wherein:
the light-semitransmissive film is made of a material that is capable of being dry-etched with an etching gas containing a fluorine-based gas, the light-shielding film is made of a material that contains tantalum and one or more elements selected from hafnium and zirconium and contains no oxygen except for a surface layer thereof, an etching stopper film is provided between the light-semitransmissive film and the light-shielding film, and the etching stopper film is made of a material that contains chromium and has an oxygen content of 20 at % or less. |
地址 |
Tokyo JP |