发明名称 MASK BLANK, TRANSFER MASK AND METHODS OF MANUFACTURING THE SAME
摘要 In a mask blank having a structure in which a light-semitransmissive film and a light-shielding film are laminated on a main surface of a transparent substrate, the light-semitransmissive film is made of a material that can be dry-etched with an etching gas containing a fluorine-based gas, the light-shielding film is made of a material that contains tantalum and one or more elements selected from hafnium and zirconium and contains no oxygen except in a surface layer thereof, an etching stopper film is provided between the light-semitransmissive film and the light-shielding film, and the etching stopper film is made of a material that contains chromium with an oxygen content of 20 at % or less.
申请公布号 US2016202602(A1) 申请公布日期 2016.07.14
申请号 US201414892260 申请日期 2014.05.19
申请人 HOYA CORPORATION 发明人 SHISHIDO Hiroaki;NOZAWA Osamu;OHKUBO Ryo
分类号 G03F1/32 主分类号 G03F1/32
代理机构 代理人
主权项 1. A mask blank comprising a light-semitransmissive film and a light-shielding film on a main surface of a transparent substrate, wherein: the light-semitransmissive film is made of a material that is capable of being dry-etched with an etching gas containing a fluorine-based gas, the light-shielding film is made of a material that contains tantalum and one or more elements selected from hafnium and zirconium and contains no oxygen except for a surface layer thereof, an etching stopper film is provided between the light-semitransmissive film and the light-shielding film, and the etching stopper film is made of a material that contains chromium and has an oxygen content of 20 at % or less.
地址 Tokyo JP