发明名称 リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法
摘要 There is provided a novel material for forming an underlayer film for lithography, which has a high carbon concentration, a low oxygen concentration, a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process. The material for forming an underlayer film for lithography of the present invention contains a compound represented by the following general formula (1). (in formula (1), each X independently represents an oxygen atom or a sulfur atom, each R 1 independently represents a single bond or a 2n-valent hydrocarbon group having 1 to 30 carbon atoms, the hydrocarbon group may have a cyclic hydrocarbon group, a double bond, a hetero atom, or an aromatic group having 6 to 30 carbon atoms, and each R 2 independently represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a hydroxyl group, provided that at least one R 2 represents a hydroxyl group, each m is independently an integer of 1 to 6, and n is an integer of 1 to 4.)
申请公布号 JP5979384(B2) 申请公布日期 2016.08.24
申请号 JP20130528990 申请日期 2012.08.09
申请人 三菱瓦斯化学株式会社 发明人 越後 雅敏;東原 豪;内山 直哉
分类号 G03F7/11;C07D311/78;C07D311/96;G03F7/26 主分类号 G03F7/11
代理机构 代理人
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